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PNP Silicon Darlington Transistors
High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 875, BC 877, BC 879 (NPN)
q
BC 876 ... BC 880
Type BC 876 BC 878 BC 880
Marking -
Ordering Code C62702-C943 C62702-C942 C62702-C941
Pin Configuration 1 2 3 E C B
Package1) TO-92
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 90 C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - case3)
1) 2)
Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg
Values BC 876 45 60
Unit BC 878 60 80 5 1 2 100 200 0.8 (1) 150 - 65 ... + 150 W C mA A BC 880 80 100 V
Rth JA Rth JC

156 75
K/W
3)
For detailed information see chapter Package Outlines. If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm x 10 mm large copper area for the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 C. Mounted on Al heat sink 15 mm x 25 mm x 0.5 mm.
Semiconductor Group
1
5.91
BC 876 ... BC 880
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 50 mA BC 876 BC 878 BC 880 Collector-base breakdown voltage IC = 100 A BC 876 BC 878 BC 880 Emitter-base breakdown voltage, IE = 100 A Collector cutoff current VCE = 0.5 x VCEmax Collector cutoff current VCB = VCBmax VCB = VCBmax, TA = 150 C Emitter cutoff current, VEB = 4 V DC current gain IC = 150 mA; VCE = 10 V1) IC = 500 mA; VCE = 10 V1) Collector-emitter saturation voltage1) IC = 500 mA, IB = 0.5 mA IC = 1000 mA, IB = 1 mA Base-emitter saturation voltage1) IC = 1000 mA; IB = 1 mA AC characteristics Transition frequency IC = 200 mA, VCE = 5 V, f = 20 MHz fT - 150 - MHz V(BR)CE0 45 60 80 V(BR)CB0 60 80 100 V(BR)EB0 ICE0 ICB0 - - IEB0 hFE 1000 2000 VCEsat - - VBEsat - - - - 1.3 1.8 2.2 - - - - V - - - - 100 20 100 nA
A
Values typ. max.
Unit
V - - - - - -
- - - - -
- - - - 500
5 -
nA -
1)
Pulse test: t 300 s, D 2 %.
Semiconductor Group
2
BC 876 ... BC 880
Total power dissipation Ptot = f (TA; TC)
Collector cutoff current ICB0 = f (TA) VCB = 100 V
Permissible pulse load RthJA = f (t p)
DC current gain hFE = f (TA) VCE = 10 V
Semiconductor Group
3
BC 876 ... BC 880
DC current gain hFE = f (IC) VCE = 10 V, TA = 25 C
Transition frequency fT = f (IC) VCE = 5 V, f = 20 MHz
Collector-emitter saturation voltage VCEsat = f (IC) Parameter = IB, TA = 25 C
Base-emitter saturation voltage VBEsat = f (IC) Parameter = IB, TA = 25 C
Semiconductor Group
4

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